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| PROCESS Small Signal Transistor CP225 Central TM NPN - Amp/Switch Transistor Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 28,960 PRINCIPAL DEVICE TYPES 2N2218A 2N2221A EPITAXIAL PLANAR 19.8 x 19.8 MILS 9.5 MILS 4.3 x 4.3 MILS 4.3 x 4.3 MILS Al - 30,000A Au - 12,000A 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) Central TM PROCESS CP225 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) |
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